N-channel MOSFET featuring 40V drain-source voltage and 50A continuous drain current. Offers a low 5.6mΩ drain-to-source resistance and 71W maximum power dissipation. AEC-Q101 qualified for automotive applications, this component operates across a wide temperature range from -55°C to 175°C. Ideal for high-current switching applications with fast switching characteristics, including 9ns turn-on delay and 5ns fall time.
PolarityN-CHANNEL
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Technical Specifications
Vishay SQD50N04-5M6_T4GE3 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Series | SQ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQD50N04-5M6_T4GE3 Datasheet
Download the complete datasheet for Vishay SQD50N04-5M6_T4GE3 to view detailed technical specifications.
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