Vishay
SQD50N06-09L_GE3
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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Technical Specifications
Vishay SQD50N06-09L_GE3 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Vishay SQD50N06-09L_GE3 Datasheet
Download the complete datasheet for Vishay SQD50N06-09L_GE3 to view detailed technical specifications.
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