The SQD50N10-8M9L_GE3 is an N-Channel 100 V TrenchFET power MOSFET designed for automotive applications. It is AEC-Q101 qualified, features a low thermal resistance package, and is 100% Rg and UIS tested. The device is lead-free and RoHS compliant, operating within a temperature range of -55 °C to +175 °C.
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Technical Specifications
Vishay SQD50N10-8M9L_GE3 technical specifications.
General
| Drain-Source Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 50A |
| Drain-Source On-Resistance (Rds On) @ 10V | 8.9mΩ |
| Gate-Source Threshold Voltage (Vgs th) | 2.5V |
| Power Dissipation (Pd) | 136W |
| Operating junction temperature | -55 to +175°C |
| Total Gate Charge (Qg) | 34.6nC |
Compliance
| RoHS | Compliant |
| Automotive Qualification | AEC-Q101 Qualified |
| Halogen-free | Yes |
Datasheet
Vishay SQD50N10-8M9L_GE3 Datasheet
Download the complete datasheet for Vishay SQD50N10-8M9L_GE3 to view detailed technical specifications.
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