P-channel power MOSFET featuring a -40V drain-source voltage and -50A continuous drain current. This surface-mount device offers a low 13mΩ maximum drain-source on-resistance and 83W maximum power dissipation. Operating across a wide temperature range of -55°C to 175°C, it boasts fast switching characteristics with a 10ns turn-on delay and 16ns fall time. The component is housed in a TO-252-3 package and is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SQD50P04-13L_GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
-50A
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
13MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.59nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
13mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.5V
Turn-Off Delay Time
40ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQD50P04-13L_GE3 Datasheet
Download the complete datasheet for Vishay SQD50P04-13L_GE3 to view detailed technical specifications.
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