Vishay
SQD50P08-25L_GE3
Power Field-Effect Transistor, 50A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
PackageTO-252-2
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SQD50P08-25L_GE3 technical specifications.
General
| Package/Case | TO-252-2 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Series | SQD50xxx |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQD50P08-25L_GE3 Datasheet
Download the complete datasheet for Vishay SQD50P08-25L_GE3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
