Vishay
SQD50P08-28_GE3
Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
MountingSurface Mount
Power136W
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Technical Specifications
Vishay SQD50P08-28_GE3 technical specifications.
General
Continuous Drain Current (ID)
48A
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Power Dissipation
136W
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Vishay SQD50P08-28_GE3 Datasheet
Download the complete datasheet for Vishay SQD50P08-28_GE3 to view detailed technical specifications.
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