MountingSurface Mount
PolarityN-CHANNEL
Power68W
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Technical Specifications
Vishay SQJ848EP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
30A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
40V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.5nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
68W
Radiation Hardening
No
Rds On Max
9mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
38ns
Turn-On Delay Time
18ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ848EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ848EP-T1-GE3 to view detailed technical specifications.
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