N-Channel Power MOSFET featuring 40V drain-source voltage and 60A continuous drain current. Offers low 3.6mΩ drain-to-source resistance and 55W power dissipation. Designed for surface mounting with a POWERPAK SO-8L package. Operates across a wide temperature range from -55°C to 175°C. RoHS compliant and halogen-free.
MountingSurface Mount
PolarityN-CHANNEL
Power55W
Quick Jump:
Technical Specifications
Vishay SQJ886EP-T1_GE3 technical specifications.
General
| Continuous Drain Current (ID) | 60A |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.922nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 55W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQJ886EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ886EP-T1_GE3 to view detailed technical specifications.
No datasheet is available for this part.