N-Channel MOSFET with 40V drain-source breakdown voltage and 8A continuous drain current. Features low 14mΩ drain-source resistance and 48W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. This surface-mount component offers fast switching with a 7ns turn-on delay and 19ns fall time.
MountingSurface Mount
PolarityN-CHANNEL
Power48W
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Technical Specifications
Vishay SQJ912EP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
40V
Fall Time
19ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.248nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
48W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
33ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ912EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ912EP-T1-GE3 to view detailed technical specifications.
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