N-Channel Power MOSFET, 60V Vdss, 8A continuous drain current, and 36mΩ maximum drain-source on-resistance. Features 2 N-Channel elements, 2V threshold voltage, and 735pF input capacitance. Operates from -55°C to 175°C with a maximum power dissipation of 34W. Packaged in a surface-mount POWERPAK SO-8L, 4-pin configuration, supplied on tape and reel. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQJ960EP-T1_GE3 technical specifications.
General
Continuous Drain Current (ID)
8A
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
40mR
Fall Time
7ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
735pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
34W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
36mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
19ns
Turn-On Delay Time
6ns
Weight
0.01787oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ960EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ960EP-T1_GE3 to view detailed technical specifications.
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