N-channel MOSFET with 60V drain-source voltage and 8A continuous drain current. Features low 60mΩ drain-source on-resistance and 2N-channel configuration. Operates across a -55°C to 175°C temperature range with 25W maximum power dissipation. Surface mountable in an 8-pin PowerPAK SO package, this RoHS compliant component offers fast switching with 5ns turn-on delay and 6ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQJ962EP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8A
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
60mR
Fall Time
6ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
475pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
60mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
16ns
Turn-On Delay Time
5ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQJ962EP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SQJ962EP-T1-GE3 to view detailed technical specifications.
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