Vishay
SQJ992EP-T1_GE3
Power Field-Effect Transistor, 15A I(D), 60V, 0.0562ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Resistance0.047R
MountingSurface Mount
Quick Jump:
Technical Specifications
Vishay SQJ992EP-T1_GE3 technical specifications.
General
| Continuous Drain Current (ID) | 15A |
| Drain to Source Voltage (Vdss) | 60V |
| FET Type | 2 N-Channel |
| Input Capacitance | 446pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 34W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 56.2mR |
| Reach SVHC Compliant | Unknown |
| Resistance | 0.047R |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Threshold Voltage | 2V |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQJ992EP-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQJ992EP-T1_GE3 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
