Vishay
SQJB60EP-T1_GE3
Power Field-Effect Transistor, 30A I(D), 60V, 0.012ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
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Technical Specifications
Vishay SQJB60EP-T1_GE3 technical specifications.
General
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Vishay SQJB60EP-T1_GE3 Datasheet
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