Vishay
SQM100N04-2M7_GE3
Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3/2
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQM100N04-2M7_GE3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7.91nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 157W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.068654oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQM100N04-2M7_GE3 Datasheet
Download the complete datasheet for Vishay SQM100N04-2M7_GE3 to view detailed technical specifications.
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