P-channel Power MOSFET featuring 40V drain-source voltage and 120A continuous drain current. This surface-mount device utilizes a D2PAK (TO-263) package with gull-wing leads, offering a low 4mOhm drain-source resistance at 10V. With a maximum power dissipation of 375W and a wide operating temperature range of -55°C to 175°C, it is suitable for demanding automotive applications.
PackageD2PAK
MountingSurface Mount
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Technical Specifications
Vishay SQM110P04-04L-GE3 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-263
Package/Case
D2PAK
Package Description
Double Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
10.41(Max)
Package Width (mm)
9.65(Max)
Package Height (mm)
4.83(Max)
Seated Plane Height (mm)
5.08(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-263AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
120A
Maximum Drain Source Resistance
4@10VmOhm
Typical Gate Charge @ Vgs
220@10VnC
Typical Gate Charge @ 10V
220nC
Typical Input Capacitance @ Vds
11183@20VpF
Maximum Power Dissipation
375000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
18612
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Vishay SQM110P04-04L-GE3 Datasheet
Download the complete datasheet for Vishay SQM110P04-04L-GE3 to view detailed technical specifications.
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