N-channel MOSFET transistor featuring a 40V drain-source voltage and 120A continuous drain current. Offers a low 1.9mΩ drain-to-source resistance at a 10V gate-source voltage. Designed for surface mounting in a TO-263-3 package, this component operates within a temperature range of -55°C to 175°C and supports a maximum power dissipation of 300W. Key switching characteristics include a 12ns turn-on delay and 92ns fall time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQM120N04-1M9_GE3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Resistance | 1.9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 92ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.79nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.9mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 248ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.068654oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQM120N04-1M9_GE3 Datasheet
Download the complete datasheet for Vishay SQM120N04-1M9_GE3 to view detailed technical specifications.
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