Vishay
SQM120P04-04L_GE3
Power Field-Effect Transistor, 120A I(D), 40V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Vishay SQM120P04-04L_GE3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
120A
Drain to Source Voltage (Vdss)
40V
Fall Time
45ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
13.98nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
375W
Mount
Surface Mount
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
4mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, TrenchFET®
Turn-Off Delay Time
112ns
Turn-On Delay Time
17ns
Compliance
RoHS
Compliant
Datasheet
Vishay SQM120P04-04L_GE3 Datasheet
Download the complete datasheet for Vishay SQM120P04-04L_GE3 to view detailed technical specifications.
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