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Technical Specifications
Vishay SQM200N04-1M1L-GE3 technical specifications.
General
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Resistance | 1.1mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 189ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 20.655nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.1mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 665ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.056438oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQM200N04-1M1L-GE3 Datasheet
Download the complete datasheet for Vishay SQM200N04-1M1L-GE3 to view detailed technical specifications.
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