N-channel power MOSFET featuring 150V drain-source voltage and 40A continuous drain current. Offers low 38mΩ drain-source on-resistance for efficient power switching. Designed for surface mounting in a TO-263-3 package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 166W. Includes fast switching characteristics with a 9ns fall time and 14ns turn-on delay.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQM40N15-38_GE3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.39nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SQM40N15-38_GE3 Datasheet
Download the complete datasheet for Vishay SQM40N15-38_GE3 to view detailed technical specifications.
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