N-channel MOSFET, 100V drain-source voltage, 47A continuous drain current, and 24mΩ drain-source resistance. Features a TO-263-3 surface mount package, 136W max power dissipation, and operates from -55°C to 175°C. Includes fast switching characteristics with 6ns fall time, 10ns turn-on delay, and 32ns turn-off delay.
Vishay SQM47N10-24L_GE3 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.62nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | Unknown |
| Series | TrenchFET® |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| RoHS | Compliant |
Download the complete datasheet for Vishay SQM47N10-24L_GE3 to view detailed technical specifications.
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