Vishay
SQM50N04-4M1-GE3
VISHAY SQM50N04-4M1-GE3 MOSFET Transistor, N Channel, 50 A, 40 V, 0.003 ohm, 10 V, 3 V
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SQM50N04-4M1-GE3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
50A
Drain to Source Resistance
4.1mR
Drain to Source Voltage (Vdss)
40V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.715nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
4.1mR
Reach SVHC Compliant
Unknown
Series
TrenchFET®
Threshold Voltage
3V
Turn-Off Delay Time
35ns
Turn-On Delay Time
12ns
Weight
0.068654oz
Compliance
RoHS
Compliant
Datasheet
Vishay SQM50N04-4M1-GE3 Datasheet
Download the complete datasheet for Vishay SQM50N04-4M1-GE3 to view detailed technical specifications.
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