N-channel MOSFET featuring 40V drain-source breakdown voltage and 70A continuous drain current. Offers low 10mΩ drain-source resistance and 120W power handling. Packaged in TO-263-3, this RoHS compliant component operates from -55°C to 175°C with fast switching times including 14ns turn-on delay and 30ns fall time.
Vishay SUB70N04-10-E3 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 107W |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SUB |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SUB70N04-10-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.