N-Channel Power MOSFET, 100V Drain-Source Voltage, 6.5A Continuous Drain Current, and 200mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252AA surface-mount package, 16.7W max power dissipation, and operates from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 7ns and fall time of 9ns. This component is RoHS compliant and halogen-free.
PackageTO-252AA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD06N10-225L-GE3 technical specifications.
General
Package/Case
TO-252AA
Continuous Drain Current (ID)
6.5A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
200mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
240pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
16.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
8ns
Turn-On Delay Time
7ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SUD06N10-225L-GE3 Datasheet
Download the complete datasheet for Vishay SUD06N10-225L-GE3 to view detailed technical specifications.
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