P-channel power MOSFET for general-purpose applications. Features 60V drain-source breakdown voltage and 8.4A continuous drain current. Offers a low 155mΩ drain-source on-resistance. Packaged in a surface-mount DPAK with a 25W maximum power dissipation. Operates across a wide temperature range of -55°C to 175°C and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SUD08P06-155L-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
8.4A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
155mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
155MR
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
Height
0.094inch
Input Capacitance
450pF
Lead Free
Lead Free
Length
0.264inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
25W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
155mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-2V
Turn-Off Delay Time
15ns
Turn-On Delay Time
5ns
Width
0.245inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUD08P06-155L-E3 Datasheet
Download the complete datasheet for Vishay SUD08P06-155L-E3 to view detailed technical specifications.
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