P-channel MOSFET with a -100V drain-source voltage and -8.8A continuous drain current. Features a low 195mR maximum drain-source on-resistance and a 1.055nF input capacitance. Packaged in a TO-252-3 surface-mount DPAK, this component offers fast switching with 7ns turn-on and 9ns fall times. Operates from -55°C to 150°C with a maximum power dissipation of 32.1W.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SUD09P10-195-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
-8.8A
Drain to Source Resistance
162mR
Drain to Source Voltage (Vdss)
-100V
Drain-source On Resistance-Max
195mR
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.055nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
32.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
195mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1V
Turn-Off Delay Time
33ns
Turn-On Delay Time
7ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUD09P10-195-GE3 Datasheet
Download the complete datasheet for Vishay SUD09P10-195-GE3 to view detailed technical specifications.
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