
N-channel power MOSFET with 200V drain-source breakdown voltage and 19A continuous drain current. Features low 90mΩ drain-source on-resistance and fast switching speeds with 15ns turn-on delay and 30ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 136W. Supplied in tape and reel packaging.
Vishay SUD19N20-90 technical specifications.
| Continuous Drain Current (ID) | 19A |
| Current | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 136W |
| RoHS Compliant | No |
| Series | SUD |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 15ns |
| Voltage | 200V |
| Weight | 0.01164oz |
| Width | 6.22mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay SUD19N20-90 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.