N-channel power MOSFET with 200V drain-source breakdown voltage and 19A continuous drain current. Features low 90mΩ drain-source on-resistance and fast switching speeds with 15ns turn-on delay and 30ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 136W. Supplied in tape and reel packaging.
Voltage200V
Current19A
PolarityN-CHANNEL
Power136W
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Technical Specifications
Vishay SUD19N20-90 technical specifications.
General
Continuous Drain Current (ID)
19A
Current
19A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
200V
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
136W
RoHS Compliant
No
Series
SUD
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Voltage
200V
Weight
0.01164oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SUD19N20-90 Datasheet
Download the complete datasheet for Vishay SUD19N20-90 to view detailed technical specifications.
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