N-channel MOSFET with 200V drain-source voltage and 19A continuous drain current. Features 90mΩ maximum drain-source on-resistance at a nominal Vgs of 4V. Surface mount DPAK package with 1.8nF input capacitance and 60ns fall time. Operates from -55°C to 175°C with 3W maximum power dissipation. RoHS compliant.
PackageDPAK
Voltage200V
Current19A
MountingSurface Mount
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Technical Specifications
Vishay SUD19N20-90-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
19A
Current
19A
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
90mR
Dual Supply Voltage
200V
Fall Time
60ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.8nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
90mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
15ns
Voltage
200V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD19N20-90-E3 Datasheet
Download the complete datasheet for Vishay SUD19N20-90-E3 to view detailed technical specifications.
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