P-Channel Power MOSFET with 60V drain-source voltage and 18.3A continuous drain current. Features low 60mΩ drain-source on-resistance and 38.5W maximum power dissipation. Surface mount TO-252-3 package with fast switching times, including 8ns turn-on and 30ns fall times. Operates from -55°C to 150°C and is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SUD19P06-60-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
18.3A
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
-60V
Drain-source On Resistance-Max
60mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.71nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
38.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
60mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
65ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD19P06-60-GE3 Datasheet
Download the complete datasheet for Vishay SUD19P06-60-GE3 to view detailed technical specifications.
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