P-channel power MOSFET featuring 60V drain-source voltage and 19A continuous drain current. Offers low 60mΩ drain-source on-resistance. Surface mountable in a TO-252 package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 2.1W. Includes 2.7nF input capacitance and is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power2.7W
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Technical Specifications
Vishay SUD19P06-60L-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
19A
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
60mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.7nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.7W
Radiation Hardening
No
Rds On Max
8.7mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
65ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD19P06-60L-E3 Datasheet
Download the complete datasheet for Vishay SUD19P06-60L-E3 to view detailed technical specifications.
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