N-channel power MOSFET, surface mountable in a DPAK package. Features 60V drain-source breakdown voltage and 23A continuous drain current. Offers a maximum drain-source on-resistance of 31mΩ at a nominal gate-source voltage of 2V. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 100W. This RoHS compliant component boasts fast switching speeds with turn-on delay time of 8ns and fall time of 25ns.
PackageDPAK
MountingSurface Mount
PolarityN
Power3W
Quick Jump:
Technical Specifications
Vishay SUD23N06-31L-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
23A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
69mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
31mR
Dual Supply Voltage
60V
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
2.38mm
Input Capacitance
670pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
On-State Resistance
45mR
Packaging
Cut Tape
Polarization
N
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
31mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
30ns
Turn-On Delay Time
8ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD23N06-31L-E3 Datasheet
Download the complete datasheet for Vishay SUD23N06-31L-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
