Vishay
SUD35N05-26L
Power Field-Effect Transistor, 35A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
PackageTO-252
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD35N05-26L technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
35A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
55V
Dual Supply Voltage
55V
Fall Time
100ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
7.5W
Nominal Vgs
1V
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Reach SVHC Compliant
Unknown
RoHS Compliant
No
Series
SUD
Turn-Off Delay Time
20ns
Turn-On Delay Time
5ns
Weight
0.01164oz
Compliance
RoHS
Not Compliant
Datasheet
Vishay SUD35N05-26L Datasheet
Download the complete datasheet for Vishay SUD35N05-26L to view detailed technical specifications.
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