N-channel power MOSFET, ideal for general-purpose applications. Features 100V drain-to-source voltage and 12A continuous drain current. Offers low 26mΩ drain-to-source resistance for efficient power handling. Operates within a wide temperature range of -55°C to 175°C, with a maximum power dissipation of 83W. Packaged in a surface-mount TO-252-3, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD35N10-26P-E3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 2nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD35N10-26P-E3 Datasheet
Download the complete datasheet for Vishay SUD35N10-26P-E3 to view detailed technical specifications.
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