N-channel power MOSFET, ideal for general-purpose applications. Features 100V drain-to-source voltage and 12A continuous drain current. Offers low 26mΩ drain-to-source resistance for efficient power handling. Operates within a wide temperature range of -55°C to 175°C, with a maximum power dissipation of 83W. Packaged in a surface-mount TO-252-3, this RoHS compliant component is supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD35N10-26P-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
12A
Drain to Source Resistance
26mR
Drain to Source Voltage (Vdss)
100V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.38mm
Input Capacitance
2nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
26mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
15ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD35N10-26P-E3 Datasheet
Download the complete datasheet for Vishay SUD35N10-26P-E3 to view detailed technical specifications.
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