Vishay
SUD35N10-26P-T4GE3
Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3/2
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Vishay SUD35N10-26P-T4GE3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 2nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD35N10-26P-T4GE3 Datasheet
Download the complete datasheet for Vishay SUD35N10-26P-T4GE3 to view detailed technical specifications.
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