N-channel power MOSFET featuring 20V drain-source breakdown voltage and 40A continuous drain current. This surface-mount component offers a low 8.5mΩ drain-to-source resistance at a nominal gate-source voltage of 600mV. With a maximum power dissipation of 71W and operating temperatures from -55°C to 175°C, it is suitable for general-purpose power applications. The DPAK package facilitates efficient thermal management.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power8.3W
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Technical Specifications
Vishay SUD40N02-08-E3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
40A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
8.5mR
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Fall Time
20ns
Gate to Source Voltage (Vgs)
12V
Height
0.094inch
Input Capacitance
2.66nF
Length
0.264inch
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
71W
Mount
Surface Mount
Nominal Vgs
600mV
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
8.3W
Radiation Hardening
No
Rds On Max
8.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
600mV
Turn-Off Delay Time
45ns
Turn-On Delay Time
20ns
Width
0.245inch
Compliance
RoHS
Compliant
Datasheet
Vishay SUD40N02-08-E3 Datasheet
Download the complete datasheet for Vishay SUD40N02-08-E3 to view detailed technical specifications.
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