N-channel MOSFET with 20V Drain-Source Breakdown Voltage and 24.4A Continuous Drain Current. Features low 3.3mR Drain-Source On Resistance and 79W Max Power Dissipation. Operates from -55°C to 175°C, packaged in a TO-252-3 surface mount case. Includes fast switching times with Turn-On Delay Time of 40ns and Fall Time of 33ns. RoHS compliant and Lead Free.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power3.3W
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Technical Specifications
Vishay SUD40N02-3M3P-E3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 24.4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3.3mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 3.3mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.52nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.3W |
| Radiation Hardening | No |
| Rds On Max | 3.3mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 67ns |
| Turn-On Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD40N02-3M3P-E3 Datasheet
Download the complete datasheet for Vishay SUD40N02-3M3P-E3 to view detailed technical specifications.
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