N-channel power MOSFET featuring 80V drain-source voltage and 40A continuous drain current. Offers a low 16mΩ drain-source on-resistance. Designed for surface mounting in a TO-252 package, this component boasts a maximum power dissipation of 136W and operates across a wide temperature range of -55°C to 175°C. Key electrical characteristics include a nominal gate-source voltage of 4V and fast switching times with a turn-on delay of 12ns and fall time of 10ns.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power3W
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Technical Specifications
Vishay SUD40N08-16-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
40A
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
80V
Drain-source On Resistance-Max
16mR
Dual Supply Voltage
80V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.96nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3W
Radiation Hardening
No
Rds On Max
16mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
2V
Turn-Off Delay Time
25ns
Turn-On Delay Time
12ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD40N08-16-E3 Datasheet
Download the complete datasheet for Vishay SUD40N08-16-E3 to view detailed technical specifications.
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