N-channel power MOSFET, 30V drain-source voltage, 42A continuous drain current, and 3.9mΩ maximum drain-source resistance. Features a 1V threshold voltage, 3.535nF input capacitance, and 73.5W maximum power dissipation. Packaged in a TO-252 surface-mount case, this RoHS compliant component operates from -55°C to 150°C.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD42N03-3M9P-GE3 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
42A
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.535nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
73.5W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1V
Turn-Off Delay Time
35ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Compliance
RoHS
Compliant
Datasheet
Vishay SUD42N03-3M9P-GE3 Datasheet
Download the complete datasheet for Vishay SUD42N03-3M9P-GE3 to view detailed technical specifications.
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