N-channel power MOSFET featuring 20V drain-source voltage and 30A continuous drain current. This surface-mount component offers a low 6mΩ on-state resistance and a maximum power dissipation of 65W. Designed for general-purpose power applications, it operates within a temperature range of -55°C to 175°C and is packaged in a TO-263-3 case. Key switching characteristics include a 9ns fall time and 11ns turn-on delay time.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SUD50N02-06P-E3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
30A
Drain to Source Resistance
6mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
6mR
Dual Supply Voltage
20V
Fall Time
9ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.55nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
65W
Mount
Surface Mount
Nominal Vgs
3V
Number of Channels
1
On-State Resistance
6mR
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
6mR
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Turn-Off Delay Time
24ns
Turn-On Delay Time
11ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N02-06P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N02-06P-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
