Vishay
SUD50N02-09P
Power Field-Effect Transistor, 20A I(D), 20V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
PackageTO-252-3
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD50N02-09P technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
20A
Drain to Source Resistance
9.5mR
Drain to Source Voltage (Vdss)
20V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
9.5W
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
RoHS Compliant
No
Series
SUD
Turn-Off Delay Time
25ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay SUD50N02-09P Datasheet
Download the complete datasheet for Vishay SUD50N02-09P to view detailed technical specifications.
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