Vishay
SUD50N03-07-E3
Power Field-Effect Transistor, 20A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3
PolarityN-CHANNEL
Power136W
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Technical Specifications
Vishay SUD50N03-07-E3 technical specifications.
General
Continuous Drain Current (ID)
20A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
7mR
Drain to Source Voltage (Vdss)
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
5W
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
136W
RoHS Compliant
Yes
Series
SUD
Turn-Off Delay Time
60ns
Turn-On Delay Time
14ns
DC Rated Voltage
30V
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N03-07-E3 Datasheet
Download the complete datasheet for Vishay SUD50N03-07-E3 to view detailed technical specifications.
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