Vishay
SUD50N03-10-E3
Power Field-Effect Transistor, 15A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
PackageTO-252-3
PolarityN-CHANNEL
Power83W
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Technical Specifications
Vishay SUD50N03-10-E3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50N03-10-E3 Datasheet
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