Vishay
SUD50N03-12P-GE3
Power Field-Effect Transistor, 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD50N03-12P-GE3 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 16.8A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 39W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 17mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50N03-12P-GE3 Datasheet
Download the complete datasheet for Vishay SUD50N03-12P-GE3 to view detailed technical specifications.
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