The SUD50N04-09H-E3 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a drain to source breakdown voltage of 40V. The device features a drain to source resistance of 9mR and a maximum power dissipation of 83.3W. It is RoHS compliant and packaged in a tape and reel format with 2000 units per package.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power8.33W
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Technical Specifications
Vishay SUD50N04-09H-E3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.7nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83.3W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.33W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50N04-09H-E3 Datasheet
Download the complete datasheet for Vishay SUD50N04-09H-E3 to view detailed technical specifications.
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