Vishay
SUD50N04-10P-E3
Power Field-Effect Transistor, 12.6A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3
PackageTO-252
PolarityN-CHANNEL
Power3.2W
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Technical Specifications
Vishay SUD50N04-10P-E3 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 12.6A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 10mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.2W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 56ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50N04-10P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N04-10P-E3 to view detailed technical specifications.
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