N-Channel Power MOSFET, 40V Drain-Source Voltage, 20A Continuous Drain Current, and 16mΩ Drain-Source Resistance. This silicon, metal-oxide semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 35.7W and an operating temperature range of -55°C to 175°C. Key electrical characteristics include a 16V Gate-Source Voltage, 1.655nF input capacitance, and switching times of 19ns (turn-on delay), 36ns (fall time), and 40ns (turn-off delay). The component is RoHS compliant and supplied in tape and reel packaging.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SUD50N04-16P-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
20A
Drain to Source Resistance
16mR
Drain to Source Voltage (Vdss)
40V
Fall Time
36ns
Gate to Source Voltage (Vgs)
16V
Height
2.39mm
Input Capacitance
1.655nF
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
35.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
16mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
40ns
Turn-On Delay Time
19ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N04-16P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N04-16P-E3 to view detailed technical specifications.
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