N-channel power MOSFET featuring 60V drain-source voltage and 50A continuous drain current. This surface-mount component offers a low 9.3mΩ maximum drain-source on-resistance. Designed for general-purpose power applications, it operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 136W. The TO-252-3 package is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power8.3W
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Technical Specifications
Vishay SUD50N06-09L-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
50A
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
9.3mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.65nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Nominal Vgs
2V
Number of Channels
1
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
8.3W
Radiation Hardening
No
Rds On Max
9.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
2V
Turn-Off Delay Time
35ns
Turn-On Delay Time
10ns
Weight
0.050717oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N06-09L-E3 Datasheet
Download the complete datasheet for Vishay SUD50N06-09L-E3 to view detailed technical specifications.
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