N-channel MOSFET, surface mount, TO-252-3 package. Features 100V drain-source breakdown voltage, 50A continuous drain current, and 18.5mΩ maximum drain-source on-resistance. Operates with a 20V gate-source voltage and offers a maximum power dissipation of 136.4W. Includes fast switching characteristics with 12ns turn-on delay and 8ns fall time. RoHS compliant and lead-free.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power136.4W
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Technical Specifications
Vishay SUD50N10-18P-E3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
50A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
18.5mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
18.5MR
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.6nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136.4W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
136.4W
Radiation Hardening
No
Rds On Max
18.5mR
RoHS Compliant
Yes
Series
TrenchFET®
Turn-Off Delay Time
18ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50N10-18P-E3 Datasheet
Download the complete datasheet for Vishay SUD50N10-18P-E3 to view detailed technical specifications.
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