P-channel MOSFET featuring a 40V drain-source breakdown voltage and 60A continuous drain current. Offers a low 13mΩ drain-source on-resistance and 93.7W maximum power dissipation. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 47ns fall time.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power93.7W
Quick Jump:
Technical Specifications
Vishay SUD50P04-13L-GE3 technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 60A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | -40V |
| Drain-source On Resistance-Max | 13MR |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.12nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 93.7W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 93.7W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50P04-13L-GE3 Datasheet
Download the complete datasheet for Vishay SUD50P04-13L-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.