P-channel MOSFET featuring a 40V drain-source breakdown voltage and 60A continuous drain current. Offers a low 13mΩ drain-source on-resistance and 93.7W maximum power dissipation. Designed for surface mounting in a DPAK package, this component operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 47ns fall time.
PackageDPAK
MountingSurface Mount
PolarityP-CHANNEL
Power93.7W
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Technical Specifications
Vishay SUD50P04-13L-GE3 technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
60A
Drain to Source Breakdown Voltage
40V
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
-40V
Drain-source On Resistance-Max
13MR
Fall Time
47ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
3.12nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
93.7W
Mount
Surface Mount
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
93.7W
Radiation Hardening
No
Rds On Max
13mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-3V
Turn-Off Delay Time
60ns
Turn-On Delay Time
15ns
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50P04-13L-GE3 Datasheet
Download the complete datasheet for Vishay SUD50P04-13L-GE3 to view detailed technical specifications.
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