The SUD50P08-26-E3 is a P-CHANNEL TrenchFET MOSFET from Vishay, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 50A and a drain to source breakdown voltage of -80V. The device is packaged in a TO-252-3 package and is RoHS compliant. It has a maximum power dissipation of 136W and a power dissipation of 8.3W. The SUD50P08-26-E3 is suitable for high-power applications.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
Power8.3W
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Technical Specifications
Vishay SUD50P08-26-E3 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | -80V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.16nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 136W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 8.3W |
| Rds On Max | 26mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 90ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SUD50P08-26-E3 Datasheet
Download the complete datasheet for Vishay SUD50P08-26-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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