Vishay
SUD50P10-43L-GE3
Power Field-Effect Transistor, 36.4A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SUD50P10-43L-GE3 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
37.1A
Drain to Source Resistance
43mR
Drain to Source Voltage (Vdss)
100V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.6nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
136W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
43mR
RoHS Compliant
Yes
Series
TrenchFET®
Compliance
RoHS
Compliant
Datasheet
Vishay SUD50P10-43L-GE3 Datasheet
Download the complete datasheet for Vishay SUD50P10-43L-GE3 to view detailed technical specifications.
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